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Schottky diode performance of an Au/Pd/GaAs device fabricated by deposition of monodisperse palladium nanoparticles over a p-type GaAs substrate |
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| Affiliation: | 1. Department of Physics, Faculty of Science, Atatürk University, 25240 Erzurum, Turkey;2. Department of Electrical and Electronics Engineering, Hakkari University, Hakkari, Turkey;3. Department of Chemistry, Faculty of Science, Atatürk University, 25240 Erzurum, Turkey;1. Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China;2. Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011, China;1. Faculty of Science, Fayoum University, 63514 Fayoum, Egypt;2. National Research University, MPEI, Krasnokazarmennaya 14, Moscow 111250, Russian Federation;3. Center for High Pressure Science and Technology Advanced Research, 1690 Cailun Rd., Shanghai, 201203, China;1. College of Environment and Materials Engineering, Yantai University, 32, Qingquan RD, Laishan District, Yantai 264005, China;2. Graduate Institute of Environmental Engineering, National Taiwan University, Taipei, Taiwan;3. Department of Environmental Engineering, National I-Lan University, No. 1 Sheen-Long Road, Ilan 260, Taiwan |
| Abstract: | Au/Pd/p-GaAs Schottky diodes were fabricated by simple assembly of monodisperse Pd nanoparticles on a p-type GaAs semiconductor. Monodisperse 5-nm Pd nanoparticles were synthesized via reduction of palladium(II) acetylacetonate in oleylamine using a borane tert-butylamine complex. The Au/Pd/p-GaAs Schottky diodes provided a barrier height of 0.68 eV, which is higher than room-temperature values reported in the literature. A double distribution was observed for the barrier height for the Schottky diodes from I–V–T measurements. A decrease in temperature lowered the zero-bias barrier height and increased the ideality factor. These observations were ascribed to barrier height inhomogeneities at the interface that altered the barrier height distribution. Values of the series resistance obtained by the Norde method decreased with increasing temperature. Understanding the temperature dependence of the current–voltage characteristics of Au/Pd/p-GaAs devices might be helpful in improving the quality of Pd deposited on GaAs for future device technologies. |
| Keywords: | Pd nanoparticles Au/Pd/p-GaAs Barrier height Ideality factor Inhomogeneity barrier |
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