UV light activated gas sensor for NO2 detection |
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| Affiliation: | 1. Department of Physics, Gazi University, 06500 Ankara, Turkey;2. Department of Physics, Hitit University, 19030, Corum, Turkey;1. University of Gent, vakgroep Vaste Stof Wetenschappen;2. Hungarian Academy of Sciences;2. Slovak Academy of Sciences;4. Sultan Qaboos University;5. Istanbul Medeniyet University, Turkey;1. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey;2. Science Education Department, Faculty of Education, Aksaray University, 68100 Aksaray, Turkey;3. Department of Computer Engineering, Technology Faculty, Düzce University, Düzce, Turkey;1. Department of Materials Science, Moscow State University, Leninskie Gory 1-21, Moscow 119991, Russia;2. Chemistry Department, Moscow State University, Leninskie Gory 1-3, Moscow 119991, Russia;3. Physics Department, Moscow State University, Leninskie Gory 1-2, Moscow 119991, Russia;4. Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;1. Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA;2. Department of Electrical and Computer Engineering, University of Maryland, College Park, MD 20742, USA;3. N5 Sensors Inc., Rockville, MD 20852, USA;4. Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA |
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| Abstract: | In the present study, UV light activated gas sensor was investigated for Al/Al2O3/p-Si and Al/TiO2/Al2O3/p-Si samplesby atomic layer deposition method (ALD). Generally, in order to obtain the sensing performance, traditional metal oxide semiconductor gas sensors are operated at 100–400 °C. However, this temperature range limits their applications to flammable gases, and causes high power consumption. It is important to note that sensing performance experiments should have been performed at room temperature. With the support of UV light, gas sensors do not need to be heated and they can work at room temperature easily. For this purpose, electrical measurements have been performed on sensing performance with and without UV irradiation for dedection of NO2 gas. With the help of UV irradition, we obtained good sensitivity at the room temperature for Al/TiO2/Al2O3/p-Sistructure but under the same conditions no result was obtained for Al/Al2O3/p-Si structure. Without UV irradiation, there was no sensitivity for both.We observed that increasing of sensitivities at the room temperature show a direct effect of the light on the adsorbed oxygen ions. According to the relation of photocatalytic reaction and photoactivated gas sensing process, we concluded that TiO2 might be an acceptable sensor for detection of nitrogen dioxide (NO2) at room temperature under UV illumination. |
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| Keywords: | Gas sensor UV illumination |
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