Structural and interfacial properties of large area n-a-Si:H/i-a-Si:H/p-c-Si heterojunction solar cells |
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| Affiliation: | 1. TUBİTAK, National Metrology Institute (UME), TR-41470, Gebze, Kocaeli, Turkey;2. Yıldız Technical University, Department of Physics, Davutpasa Campus, TR-34210 Esenler, Istanbul, Turkey;3. TUBITAK, Marmara Research Center (MAM), TR 41470 Gebze, Kocaeli, Turkey;4. Middle East Technical University, Department of Physics, TR-06800 Ankara, Turkey;1. Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China;2. Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011, China;1. Department of Opticianry, Vocationel School of Medical Sciences, Turgut Ozal University, Ankara, Turkey;2. Department of Computer Engineering, Technology Faculty, Duzce University, Duzce, Turkey;3. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey;1. Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli, Turkey;2. Institute of Physics of NAS of Azerbaijan, H. Javid av., 33, AZ-1143, Baku, Azerbaijan |
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| Abstract: | Growth of hydrogenated amorphous silicon in a doping inversed silicon heterojunction solar cell (n-a-Si:H/i-a-Si:H/p-c-Si) interface was investigated by High Resolution Transmission Electron Microscopy (HR-TEM), Spectroscopic Ellipsometry (SE), Fourier Transform Infrared Attenuated Total Reflection spectroscopy (FTIR-ATR) and current–voltage (I–V) measurements. Effective Medium Approximation (EMA) to the SE was used to describe breakage of epi-Si and evolution of mixture of microcrystalline and amorphous phases. Fabricated silicon heterojunction solar cells were characterized by dark and light I–V measurements at Standard Test Conditions. By improving the cleaning and deposition conditions, solar cells with 9.2% efficiency over 72 cm2 total active area were obtained on p-type c-Si wafers. |
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| Keywords: | Doping inversed large area silicon heterojunction (SHJ) TEM SE Epi-layer |
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