Improving carriers mobility in copper and iron-codoped CdO |
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| Affiliation: | 1. Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro, Mexico;2. Laboratory of Applied Optics, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden;3. Thin Film Physics Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden |
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| Abstract: | Thin films of Fe and Cu-codoped CdO (CdO:Cu:Fe) with different Fe content and fixed Cu content were deposited in a high vacuum on glass and Si wafer substrates. These films were studied by X-ray fluorescence (XRF), X-ray diffraction (XED), optical spectroscopy, and dc-electrical measurements. The structural results show enhancement of film [1 1 1] orientation with Fe doping especially with 1.3%Fe film. Also, light doping with Fe improves the dc-conduction parameters of the CdO:Cu:Fe films so that the utmost enhancement of mobility (90.5 cm2/Vs) and conductivity (1470.6 S/cm) was found with 1.3 wt% Fe doping level. It was found that the variation in the bandgap is related to the variation in electron concentration that caused by Fe doping. For low Fe ion concentration (<1.3 wt% ), the bandgap varies according to the Moss–Burstein model. |
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| Keywords: | Cadmium–iron–copper oxide Fe- and Cu-doped CdO Co-doping TCO |
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