Discharge cutting technology for specific crystallographic planes of monocrystalline silicon |
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| Affiliation: | 1. Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China;2. Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011, China;1. Faculty of Science, Fayoum University, 63514 Fayoum, Egypt;2. National Research University, MPEI, Krasnokazarmennaya 14, Moscow 111250, Russian Federation;3. Center for High Pressure Science and Technology Advanced Research, 1690 Cailun Rd., Shanghai, 201203, China;1. Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Ticomán, Instituto Politécnico Nacional, 07340 México, D. F., México;2. CIDS-ICUAP, Benemérita Universidad Autónoma de Puebla, 14 sur y Avenida San Claudio, Edif. 137, 72570 Puebla, Pue., México |
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| Abstract: | Crystallographic planes were detected with X-ray crystal orientation instrument to study wire-cut electrical discharge machining (WEDM) technology for specific crystallographic planes of monocrystalline silicon. The unidirectional conductivity of monocrystalline silicon was analyzed. The contact potential barrier was decreased by preparing Ohmic contact to the surface discharging of the input terminal. Finally, the high-precision discharge cutting of the specific crystallographic planes of monocrystalline silicon was validated. Finished silicon products with specific crystallographic planes were prepared by WEDM, and the cutting efficiency, surface quality, crystal orientation precision, and qualified rate were determined. With cutting thickness of 200 mm, the cutting efficiency reached 100 mm2/min, and the precision of crystal orientation reached 3′ or less. |
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| Keywords: | Monocrystalline silicon Wire-cut electrical discharge machining Specific crystallographic plane cutting Unidirectional conductivity Ohmic contact |
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