Study on the thermal stability of Ga-doped ZnO thin film: A transparent conductive layer for dye-sensitized TiO2 nanoparticles based solar cells |
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Affiliation: | 1. School of Physics & Electronic Science, Changsha University of Science & Technology, Changsha 410114, People?s Republic of China;2. School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116, People?s Republic of China;3. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People?s Republic of China;1. Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, China;2. Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan |
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Abstract: | Generally, optoelectronic devices are fabricated at a high temperature. So the stability of properties for transparent conductive oxide (TCO) films at such a high temperature must be excellent. In the paper, we investigated the thermal stability of Ga-doped ZnO (GZO) transparent conductive films which were heated in air at a high temperature up to 500 °C for 30 min. After heating in air at 500 °C for 30 min, the lowest sheet resistance value for the GZO film grown at 300 °C increased from 5.5 Ω/sq to 8.3 Ω/sq, which is lower than 10 Ω/sq. The average transmittance in the visible light of all the GZO films is over 90%, and the highest transmittance is as high as 96%, which is not influenced by heating. However, the transmittance in the near-infrared (NIR) region for the GZO film grown at 350 °C increases significantly after heating. And the grain size of the GZO film grown at 350 °C after annealing at 500 °C for 30 min is the biggest. Then dye-sensitized TiO2 NPs based solar cells were fabricated on the GZO film grown at 350 °C (which exhibits the highest transmittance in NIR region after heating at 500 °C for 30 min) and 300 °C (which exhibits the lowest sheet resistance after heating at 500 °C for 30 min). The dye-sensitized solar cell (DSSC) fabricated on the GZO film grown at 350 °C exhibits superior conversion efficiency. Therefore, transparent conductive glass applying in DSSCs must have a low sheet resistance, a high transmittance in the ultraviolet–visible–infrared region and an excellent surface microstructure. |
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Keywords: | Zinc oxide Transparent conductive thin films High temperature Stability Dye-sensitized solar cells |
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