Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

Affiliation:	1. Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea;2. School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea;3. Department of Physics, Chonbuk National University, Jeonju 561-756, Korea;4. Division of Liberal Arts, Hanbat National University, Daejeon 305-719, Korea;1. Key laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing 401331, PR China;2. Chongqing Engineering Research Center for Optoelectronic Materials and Devices, Chongqing University of Arts and Sciences, Chongqing 402160, PR China;3. Key Laboratory of Optoelectronic Functional Materials, Chongqing Normal University, Chongqing 401331, PR China;1. College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Road, Lijiatuo, Banan District, Chongqing 400054, PR China;2. College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, PR China;3. Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, PR China;4. School of Energy Research, Xiamen University, Xiamen 361005, PR China;1. Department of Physics, Sri Venkateswara University, Tirupati 517 502, India;2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea;3. Division of Material Science, Korea Basic Science Institute, Daejeon 305-806, Republic of Korea;1. Department of Physics, Sri Venkateswara University, Tirupati 517 502, India;2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea;1. Key Laboratory of Artificial Micro- and Nano-structure of Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory and School of Physics and Technology, Wuhan University, Wuhan 430072, China;2. Department of Physics, Chemistry, and Mathematics, Alabama A&M University, 4900 Meridian Street, Huntsville, AL 35810, USA;3. Shanghai Synchrotron Radiation Facility, Shanghai 201204, China

Abstract:	We have made the successful growth of Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition (RTCVD). In order to overcome the large lattice mismatch between Ge and Si, we used a two-step growth method. Our method shows the uniformity of the thickness and good quality Ge layer with a homogeneous distribution of tensile strain and a lower etch pit density (EPD) in order of 10⁵ cm⁻². The surface morphology is very smooth and the root mean square (RMS) of the surface roughness was 0.27 nm. The photocurrent spectra were dominated by the Ge layer related transition that corresponding to the transitions of the Si and Ge. The roll-off in photocurrent spectra beyond 1600 nm is expected due to the decreased absorption of Ge.

Keywords:	Growth RTCVD Ge layer HR-XRD AFM TEM EPD Raman Photocurrent
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