Temperature effect on the physical properties of CuIn11S17 thin films for photovoltaic applications |
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| Affiliation: | 1. Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs – ENIT – Université Tunis ElManar, BP 37, Le belvédère 1002 Tunis, Tunisie;2. Institut Préparatoire des Etudes d׳Ingénieurs El Manar – Université de Tunis El Manar, BP 37, le belvédère 1002 Tunis, Tunisie;1. Department of Instrumentation Science, USIC Building, Jadavpur University, Calcutta 700032, India;2. UGC-DAE CSR, Kalpakkam Node, Kokilamedu 603104, India;3. MPD, MSG, IGCAR, Kalpakkam 603102, India;4. CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India;1. Department of Physics, Faculty of Science, Batman University, Batman, Turkey;2. Department of Science, Faculty of Education, Dicle University, 21280, Diyarbakır, Turkey;3. Science and Technology Application and Research Center (DUBTAM), Dicle University, 21280, Diyarbakır, Turkey;4. Department of Physics, Faculty of Science, Dicle University, 21280, Diyarbakır, Turkey;1. Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064, India;2. Department of Physics, University of Lucknow, Lucknow 226007, India;1. Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo, Egypt;2. Physics Department, Faculty of Science, Ain Shams University, Abassia, 11556 Cairo, Egypt;3. Basic Sciences Department, High Institute of Engineering and Technology, El-Arish, North Sinai, Egypt;1. Graduate School & Faculty of Engineering, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba-shi, Chiba 263-8522, Japan;2. College of Mechanical Engineering, Tianjin University of Science and Technology, No. 1038, Dagu Nanlu, Hexi District, Tianjin 300222, PR China;3. Chiba Industrial Technology Research Institute, 6-13-1, Tendai, Inage-ku, Chiba-shi, Chiba 263-0016, Japan;4. School of Civil Engineering, Southeast University, No. 2, Sipailou, Nanjing 210096, China;5. College of Materials Science & Engineering, Chongqing University, No. 174, Shazhengjie, Shapingba, Chongqing 400044, China |
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| Abstract: | CuIn11S17 compound was synthesized by horizontal Bridgman method using high-purity copper, indium and sulfur elements. CuIn11S17 thin films were prepared by high vacuum evaporation on glass substrates. The glass substrates were heated at 30, 100 and 200 °C. The structural properties of the powder and the films were investigated using X-ray diffraction (XRD). XRD analysis of thin films revealed that the sample deposited at a room temperature was amorphous in nature while those deposited on heated substrates were polycrystalline with a preferred orientation along the (311) plane of the spinel phase. Ultraviolet–visible (UV–vis) spectroscopy was used to study the optical properties of thin films. The results showed that CuIn11S17 thin films have high absorption coefficient α in the visible range (105–106 cm−1). The band gap Eg of the films decrease from 2.30 to 1.98 eV with increasing the substrate temperature (Ts) from 30 to 200 °C. We exploited the models of Swanepoel, Wemple–DiDomenico and Spitzer–Fan for the analysis of the dispersion of the refractive index n and the determination of the optical constants of the films. Hot probe method showed that CuIn11S17 films deposited at Ts=30 °C and Ts=100 °C are p-type conductivity whereas the sample deposited at Ts=200 °C is highly compensated. |
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| Keywords: | Thin films Thermal evaporation Structural properties Optical properties |
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