Investigation of structural and optoelectronic properties of annealed nickel phthalocyanine thin films |
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| Affiliation: | 1. Department of Physics, Faculty of Education at Al-Mahweet, Sana’a University, Al-Mahwit, Yemen;2. Department of Physics Faculty of Science, Al-Azhar University, Assiut, Egypt;3. Department of Physics, Faculty of Science, University of Tabuk, Tabuk, Saudi Arabia;4. Department of Physics, Faculty of Education, Aim Shams University, Roxy 11757, Cairo, Egypt;1. Department of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia;2. Department of Physics, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia;3. Deanship of Supportive Studies (D.S.S.), Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia;1. Department of Physics, Faculty of Science and Humanity Studies at Al, Shaqra University, Quwayiyah, Saudi Arabia;2. Department of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia;3. Department of Chemistry, Aligarh Muslim University, Aligarh 202002, India;4. Department of Physics, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia;5. Research Chair for Tribology, Surface and Interface Sciences (TSIS), Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia;6. King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451, Saudi Arabia;7. Department of Chemistry, Faculty of Science, Zagazig University, Zagazig 44519, Egypt;1. College of Food and Biological Engineering, Jiangsu University, Zhenjiang 212013, China;2. School of Food Science and Nutrition, University of Leeds, Leeds LS2 9JT, United Kingdom |
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| Abstract: | Thin films of nickel phthalocyanine (NiPc) were prepared by thermal evaporation and the effects of annealing temperature on the structural and optical properties of the samples were studied using different analytical methods. Structural analysis showed that the grain size and crystallinity of NiPc films improved as annealing temperature increased from 25 to 150 °C. Also, maximum grain size (71.3 nm) was obtained at 150 °C annealing temperature. In addition, NiPc films annealed at 150 °C had a very smooth surface with an RMS roughness of 0.41 nm. Optical analysis indicated that band gap energy of films at different annealing temperatures varied in the range of 3.22–3.28 eV. Schottky diode solar cells with a structure of ITO/PEDOT:PSS/NiPc/Al were fabricated. Measurement of the dark current density–voltage (J–V) characteristics of diodes showed that the current density of films annealed at 150 °C for a given bias was greater than that of other films. Furthermore, the films revealed the highest rectification ratio (23.1) and lowest barrier height (0.84 eV) demonstrating, respectively, 23% and 11% increase compared with those of the deposited NiPc films. Meanwhile, photoconversion behavior of films annealed at 150 °C under illumination showed the highest short circuit current density (0.070 mA/cm2) and open circuit voltage of (0.55 V). |
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| Keywords: | Organic semiconductors Metal-substituted phthalocyanine Schottky barriers Charge transport Thermal evaporation |
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