Lasing properties of PbSnTe/PbTe double hetero mid-infrared laser diodes grown by temperature difference method under controlled vapor pressure liquid-phase epitaxy |
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| Affiliation: | 1. Department of Control and Information Systems Engineering, Tsuruoka National College of Technology, Sawada 104, Inooka, Tsuruoka 997-8511, Japan;2. Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramakiaza Aoba, Sendai 980-0845, Japan;3. Semiconductor Research Institute of Semiconductor Research Foundation, Aramaki Aza Aoba 519-1176, Sendai 980-0845, Japan;1. School of Chemistry and Environment, South China Normal University, Guangzhou 510006, PR China;2. School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, PR China;1. Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China;2. Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011, China;1. Faculty of Science, Fayoum University, 63514 Fayoum, Egypt;2. National Research University, MPEI, Krasnokazarmennaya 14, Moscow 111250, Russian Federation;3. Center for High Pressure Science and Technology Advanced Research, 1690 Cailun Rd., Shanghai, 201203, China;1. Institute of Nano Science and Nano Technology, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran;2. Department of Chemistry, University of Zabol, P. O. Box 98615-538, Zabol, Islamic Republic of Iran;1. Department of Chemistry, University of Zabol, P.O. Box 98615-538, Zabol, Islamic Republic of Iran;2. Institute of Nano Science and Nano Technology, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran |
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| Abstract: | PbSnTe/PbTe double hetero-diode structures were grown by temperature difference method under controlled vapor pressure (TDM–CVP) liquid-phase epitaxy (LPE). These laser diode (LD) structures were of the PbTe (Bi)/Pb1?xSnxTe/PbTe (undoped substrate) double hetero (DH) type. The peak shift of the wavelength emitted by the fabricated diodes was recorded and it was found that they successfully lased from 15 K to over 77 K (liquid nitrogen temperature) at a slightly lower threshold current density than standard LPEs fabricated via the slow-cooling method. In addition, the lasing peak wavelength was longer than spontaneous emissions. The laser spectra of diodes with varying Sn concentrations (x) in the active layer were observed, and their intensities were recorded as a function of the wavelength. Very sharp lasing spectra were obtained between 6.5 μm and 9.4 μm (x=0–0.11), clarifying that the stoichiometry control possible with TDM–CVP is suitable for fabricating optical devices. In addition, it was demonstrated that TDM–CVP is appropriate for fabricating infrared optical devices constructed from PbxSn1?xTe systems. |
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| Keywords: | Crystal growth Liquid phase epitaxy IV–VI compounds Semiconductor materials Laser diodes Infrared devices |
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