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Brush electrodeposited silver indium selenide films and their optical characteristics
Affiliation:1. Department of Physics, National Engineering College, Kovilpatti, India;2. Department of Physics, S.T. Hindu College, Nagercoil, India;3. ECMS Division, CSIR-CECRI, Karaikudi, India;1. Department of Chemistry, University of Zabol, P.O. Box 98615-538, Zabol, Islamic Republic of Iran;2. Institute of Nano Science and Nano Technology, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran;1. School of Chemistry and Environment, South China Normal University, Guangzhou 510006, PR China;2. School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, PR China;1. Solar Energy Institute, Ege University, Bornova, 35100 Izmir, Turkey;2. Advanced Technology Research & Application Center, Mersin University, Ciftlikkoy Campus, TR-33343 Yenisehir, Mersin, Turkey;1. Institute of Nano Science and Nano Technology, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran;2. Department of Chemistry, University of Zabol, P. O. Box 98615-538, Zabol, Islamic Republic of Iran;1. Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Ticomán, Instituto Politécnico Nacional, 07340 México, D. F., México;2. CIDS-ICUAP, Benemérita Universidad Autónoma de Puebla, 14 sur y Avenida San Claudio, Edif. 137, 72570 Puebla, Pue., México
Abstract:Silver indium selenide films were brush electrodeposited on tin oxide coated glass substrates at different substrate temperatures. The films were single phase with chalcopyrite structure. Optical absorption measurements indicated a band gap in the range of 1.20–1.30 eV with decrease of substrate temperature. Transmission spectra exhibited interference fringes. Using the envelope method, calculated values of refractive index at 850 nm decreased from 3.53 to 2.62 with decrease of substrate temperature. From the refractive index data, the value of N/m? was estimated to be in the range of 0.89–1.22. Optical data were analyzed by the single-effective oscillator model, and the single oscillator energy as well as the dispersion energy was estimated. The single oscillator energy decreased from 1.83 eV to 1.68 eV with the increase of substrate temperature. The dispersion energy increased from 5.42 eV to 12.25 eV with the increase of substrate temperature.
Keywords:Silver indium selenide  Optical properties  Electrodeposition
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