Effect of annealing temperature on structural,electrical and optical properties of spray pyrolytic nanocrystalline CdO thin films |
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| Affiliation: | 1. Department of Physics, Bangladesh University of Engineering and Technology, Dhaka 1000, Bangladesh;2. Department of Physics, University of Rajshahi, Rajshahi 6205, Bangladesh;1. Nano Materials and Device Laboratory, Department of Physics, Visvesvaraya National Institute of Technology, South Ambazari Road, Nagpur, 440010 Maharashtra, India;2. Department of Materials Science and Engineering, Chungnam National University (CNU), 99 Daehang-no, Yuseong-gu, Daejeon 305-764, Republic of Korea;1. Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt;2. Materials Science Laboratory, Physics Department, Girls College for Arts, Science, and Education, Ain Shams University, Cairo, Egypt;1. Physics Department, College of Education/Shaqlawa, Salahaddin University-Erbil, Iraq;2. Shaqlawa Technical college, Erbil Polytechnic University, Erbil, Iraq;3. Department of Basic Sciences, Faculty of Sciences, Erzurum Technical University, Erzurum, Turkey;4. Radiology Department, Erbil Medical Technical Institute, Erbil Polytechnic University, Erbil, Iraq;5. Department of Physics, Faculty of Science, Firat University, Elazıg, Turkey;6. Nanoscience and Nanotechnology Laboratory, Firat University, Elazig, Turkey;1. Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs – ENIT – Université Tunis ElManar, BP 37, Le belvédère 1002 Tunis, Tunisie;2. Institut Préparatoire des Etudes d׳Ingénieurs El Manar – Université de Tunis El Manar, BP 37, le belvédère 1002 Tunis, Tunisie;1. Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay, Turkey;2. Department of Physics, Faculty of Science, Anadolu University, Eskişehir, Turkey |
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| Abstract: | Nanocrystalline CdO thin films were prepared onto a glass substrate at substrate temperature of 300 °C by a spray pyrolysis technique. Grown films were annealed at 250, 350, 450 and 550 °C for 2.5 h and studied by the X-ray diffraction, Hall voltage measurement, UV-spectroscopy, and scanning electron microscope. The X-ray diffraction study confirms the cubic structure of as-deposited and annealed films. The grain size increases whereas the dislocation density decreases with increasing annealing temperature. The Hall measurement confirms that CdO is an n-type semiconductor. The carrier density and mobility increase with increasing annealing temperature up to 450 °C. The temperature dependent dc resistivity of as-deposited film shows metallic behavior from room temperature to 370 K after which it is semiconducting in nature. The metallic behavior completely washed out by annealing the samples at different temperatures. Optical transmittance and band gap energy of the films are found to decrease with increasing annealing temperature and the highest transmittance is found in near infrared region. The refractive index and optical conductivity of the CdO thin films enhanced by annealing. Scanning electron microscopy confirms formation of nano-structured CdO thin films with clear grain boundary. |
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| Keywords: | Annealing Structural properties Electrical properties Optical properties |
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