Influence of thermal annealing on electrical and optical properties of indium tin oxide thin films |
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Affiliation: | 1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, PR China;2. Institute of Opto-Electronics, Nanjing University & Yangzhou, Yangzhou 225009, PR China;1. Department of Electrical and Computer Engineering, University of Alberta, 9211-116 St, Edmonton, Alberta, T6G 1H9, Canada;2. Department of Chemical and Materials Engineering, University of Alberta, 9211-116 St, Edmonton, Alberta, T6G 1H9, Canada;3. Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2E1, Canada |
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Abstract: | Transparent conducting indium tin oxide (ITO) thin films with the thickness of 300 nm were deposited on quartz substrates via electron beam evaporation, and five of them post-annealed in air atmosphere for 10 min at five selected temperature points from 200 °C to 600 °C, respectively. An UV–vis spectrophotometer and Hall measurement system were adopted to characterize the ITO thin films. Influence of thermal annealing in air atmosphere on electrical and optical properties was investigated in detail. The sheet resistance reached the minimum of 6.67 Ω/sq after annealed at 300 °C. It increased dramatically at even higher annealing temperature. The mean transmittance over the range from 400 nm to 800 nm reached the maximum of 89.03% after annealed at 400 °C, and the figure of merit reached the maximum of 17.79 (Unit: 10−3 Ω−1) under the same annealing condition. With the annealing temperature increased from 400 °C to 600 °C, the variations of transmittance were negligible, but the figure of merit decreased significantly due to the deterioration of electrical conductivity. With increasing the annealing temperature, the absorption edge shifted towards longer wavelength. It could be explained on the basis of Burstein–Moss shift. The values of optical band gap varied in the range of 3.866–4.392 eV. |
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Keywords: | Indium tin oxide Thermal annealing Sheet resistance Transmittance Figure of merit |
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