Highly sensitive In0.53Ga0.47As/InP Hallsensors grown by MOVPE |
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Authors: | Kyburz R. Schmid J. Popovic R.S. Melchior H. |
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Affiliation: | Inst. for Quantum Electron., Swiss Federal Inst. of Technol., Zurich; |
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Abstract: | High performance InP/InGaAs Hall sensors appropriate for applications requiring high sensitivity at low power dissipation, good linearity, low temperature sensitivity, and high resolution are reported. The layer structures grown by MOVPE combine a high mobility In 0.53Ga0.47As channel with isolation by semi-insulating InP. With this design bias current related sensitivities up to 760 V/AT at sheet resistances below 840 Ω/square have been achieved, allowing high output signals at low power dissipation. Due to the active layer isolation by semi-insulating InP, bias currents are not limited by channel pinch-off or junction breakdown. This leads to absolute sensitivities as high as 12.5 V/T. Linearity errors are lower than -0.8% up to magnetic fields of 0.5 T. Temperature coefficients of the sensitivity were measured for different donor concentrations of the active layer. The lowest value of -0.07%/K was found for a doping of 10 16 cm-3, in accordance with theoretical predictions. High signal-to-noise ratios corresponding to minimal detectable fields of 50 nT/Hzl/2 and 160 nT/Hzl/2, respectively, were measured at 1 kHz and 100 Hz |
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