基于微电铸工艺的高深宽比引信开关制作

为满足军事武器系统对引信开关的不断需求,采用光刻和精密微电铸工艺在金属基底上制作了一款具有高深宽比结构的引信开关。研究了超声波辅助显影和曝光剂量对胶膜制作的影响,解决了高深宽比胶膜制作难的问题。采用优化电铸液参数及电铸前胶膜预处理的方法,解决了电铸层与基底界面结合失效的问题。引入尺寸误差补偿的方法,降低了因溶胀和去胶释放等工艺带来的制作误差。最终制作出结构尺寸为4000μm×3900μm×360μm、最小尺寸为20μm、最大深宽比为14∶1的开关结构,为制作高深宽比金属微结构提供了一种可行的工艺参考方案。

Fabrication of Fuse Switch with High Aspect Ratio Based on Micro Electroforming Process

In order to meet the continue demands for fuse switch in military weapon system ,a switch with high aspect ratio structure was fabricated on a metal substrate by using the processes of lithography and precision micro electroforming. The effects of ultrasonic assisted development and exposure measurement on film fabrication were studied. The difficulties in making high aspect ratio film were overcame. To solve the problem of interface bonding failure ,the components of electroforming solution were improved and the molds were pretreated. At the same time ,the fabrication error caused by swelling and release was reduced by the introduction method of size error compensation. The overall size of the switch is 4000 μm ×3900 μm ×360 μm,the minimum size is 20 μm while the maximum depth width ratio is 14:1. This research provides a feasible reference for the fabrication of high aspect ratio structure.