| 退火温度对WO_3薄膜结构及气敏性能的影响 |
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| 引用本文： | 杨晓红,马勇,康庆.退火温度对WO_3薄膜结构及气敏性能的影响[J].电子元件与材料,2009,28(8). |
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| 作者姓名： | 杨晓红 马勇 康庆 |
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| 作者单位： | 重庆师范大学,物理学与信息技术学院,重庆,400047 |
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| 基金项目： | 重庆市教育委员会科学技术研究资助项目(No.KJ070804) |
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| 摘 要： | 采用直流磁控溅射法制备了WO3薄膜,并在350~550℃时对薄膜进行退火处理,研究了退火温度对薄膜结构及气敏性能的影响。结果表明:退火前及350℃退火后的薄膜为非晶态,450℃和550℃退火后的薄膜为WO3–x型晶态;随退火温度的提高,薄膜厚度增加,晶粒度增大。550℃退火后薄膜的厚度,较450℃退火后薄膜厚30nm,晶粒度相差8nm;450℃和550℃退火后的薄膜,在150℃时对体积分数为0.05%的NO2的灵敏度接近于22。
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| 关 键 词： | WO3薄膜 退火 晶体结构 气敏性能 |
Effect of annealing temperature on structure and gas-sensing properties of WO3 thin films |
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| YANG Xiaohong,MA Yong,KANG Qing.Effect of annealing temperature on structure and gas-sensing properties of WO3 thin films[J].Electronic Components & Materials,2009,28(8). |
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| Authors: | YANG Xiaohong MA Yong KANG Qing |
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| Affiliation: | College of Physics and Information Technology;Chongqing Normal University;Chongqing 400047;China |
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| Abstract: | WO3 thin films were deposited onto glass substrates by DC magnetron sputtering technology and then it was annealed at 350～550 ℃. Effects of annealing temperature on the structure and gas-sensing properties of the thin films were studied. The results show that as-deposited thin films and thin films annealed at 350 ℃ are amorphous, the thin films annealed at 450 ℃ and 550 ℃ are WO3-x crystals. As the annealing temperature increases, the crystallite and the thin film thickness increase simultaneously. The thickness of thin films annealed at 550 ℃ is thicker than that of the thin films annealed at 450 ℃ by 30 nm and the crystallite is bigger by 8 nm. The sensitivity of thin films annealed at 450 ℃ and 550 ℃ to 0.05% (volume fraction) NO2 is about 22 at working temperature of 150 ℃. |
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| Keywords: | WO3 thin film annealing crystal structure gas-sensing property |
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