Multiple negative-differential-resistance (MNDR) phenomena of ametal-insulator-semiconductor-insulator-metal (MISIM)-like structurewith step-compositioned InxGa1-xAs quantum wells |
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| Authors: | Wen-Chau Liu Lih-Wen Laih Shiou-Ying Cheng Wen-Lung Chang Wei-Chou Wang Jing-Yuh Chen Po-Hung Lin |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan; |
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| Abstract: | In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional InxGa1-x As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviours and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristic are observed at -105°C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has good potential in multiple-valued logic applications |
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