The influence of oxygen ambient annealing conditions on the quality of Al/SiO2/n-type 4H-SiC MOS structure |
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| Authors: | Krystian Król Ma?gorzata Kalisz Mariusz Sochacki Jan Szmidt |
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| Affiliation: | 1. Institute of Microelectronics and Optoelectronics, 75 Koszykowa Str., 00-662 Warsaw, Poland;2. Motor Transport Institute, 80 Jagiellońska Str., 03-301 Warsaw, Poland;3. Tele and Radio Research Institute, 11 Ratuszowa Str., 03-450 Warsaw, Poland |
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| Abstract: | The effect of reoxidation process in O2 on the electrical properties of metal-oxide-semiconductor (MOS) capacitors fabricated on n-type 4H-SiC (0 0 0 1) is investigated. All samples were oxidized in wet oxygen at temperature of 1175 °C. Reoxidation process was carried out on four of the five samples. Samples were annealed at temperature of 700 °C and 800 °C for different process times. The reoxidation process in oxygen improves the quality of the dielectric layer and the interface of Al/SiO2/n-type 4H-SiC MOS structure. The best quality of the SiO2/SiC interface can be achieved for the MOS structure annealed in O2 at higher temperature (800 °C) for longer time. However, higher and more uniformly distributed values of breakdown voltage were obtained for MOS structures reoxidized at temperature of 700 °C. |
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| Keywords: | Silicon oxide Post-oxidation annealing High temperature oxidation Silicon carbide |
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