Influence of series resistance and cooling conditions on I–V characteristics of SiC merged PiN Schottky diodes |
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| Authors: | Aneta Hapka Wlodzimierz JankeJaroslaw Krasniewski |
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| Affiliation: | Department of Electronics and Computer Science, Koszalin University of Technology, J. J. ?niadeckich 2, Koszalin, Postal Code: 75-453, Poland |
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| Abstract: | The paper presents the exemplary electro-thermal models of merged PiN Schottky diode – a diode with the parallel PiN junction, protecting the device against the uncontrolled voltage rise, causing so-called thermal runaway. In the presented models, the conductivity modulation effect in the PiN junction is taken into account. The influence of the PiN junction on the non-isothermal I–V characteristics of MPS diodes, for various cooling conditions, is discussed. It is shown, that the thermal runaway is possible, in spite of presence of protecting PiN junction. |
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| Keywords: | Silicon carbide Merged PiN Schottky Parasitic series resistance Thermal resistance |
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