| TiO2薄膜氧敏特性研究 |
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| 引用本文： | 姚红军 汪荣昌. TiO2薄膜氧敏特性研究[J]. 传感技术学报, 1997, 10(1): 30-34 |
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| 作者姓名： | 姚红军 汪荣昌 |
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| 作者单位： | 复旦大学材料科学系!上海市200433 |
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| 摘 要： | 金属氧化物随氧分压不同，有改变电导率这一性质而被广泛地用来制作氧敏传感器，传统的传感器大多是体材料或厚膜材料，工作时需加高温。本文描述的是ＴｉＯ２薄膜材料与Ｐｔ薄膜形成的肖特基势垒高度随氧分压不同而改变的氧敏现象，测定了该肖特基二极管的氧敏特性，并讨论了它的敏感机理。
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| 关 键 词： | 氧敏传感器 肖特基 MOCVD 薄膜 二氧化钛 |
Characteristics of Oxygen Sensitivity of TiO_2 Thin Films |
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| Yao Hongjun Wang Rongchang Rang Ruifeng Xu Fei Jin Haiyan. Characteristics of Oxygen Sensitivity of TiO_2 Thin Films[J]. Journal of Transduction Technology, 1997, 10(1): 30-34 |
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| Authors: | Yao Hongjun Wang Rongchang Rang Ruifeng Xu Fei Jin Haiyan |
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| Abstract: | The ability of metal oxides (such as zirconia, titania, etc. ) to change their electric conductivity on variations of the partial pressure of oxygen has been utilized for development of oxygen sensors. Tranditional sensors are mostly made from bulk or thick films materials, which need high temperature when working. The objective of this paper is to describe the change of the height of Schottky barriers at the surface of titania when the partial pressure of oxygen changed. The properties of this Schottky diode was measured and the mechanism was discussed. |
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| Keywords: | oxygen sensors TiO2 Schottky MOCVD thin films |
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