提高砷化镓功率MMIC中电容成品率的研究

金属－绝缘体－金属（ＭＩＭ）电容量影响ＧａＡｓ微波单元集成电路（ＭＭＩＣ）成品率的主要原因之一，ＰＥＣＶＤ氮化硅膜又是影响ＭＩＭ电容质量和成品率的主要因素。本文通过实验和分析，提出了提高氮化硅膜质量和减少薄膜针孔的方法，结果大大提高了ＭＩＭ电容ＧａＡｓＭＭＩＣ的成品率，降低了ＧａＡｓ ＭＭＩＣ的成本。

A Study of Raising the Yield of MIM Capacitors in the GaAs Power MMIC

The m.tal -Insulatot -metal capacitor is one of the main factors Innuencing the yield ot OaAs microwave monolithic ICs' The plasma enhanced CVDsilicon nitride film is a primary factor Innuencing the yield and the quality of MIM capacitors. To raise the yield of MIM capacitots, the methods for improving the quality and reducing the pinholes of silicon nitride films are proposed by experiments and analySis in this paper. The yield of MIM capacitors and OaAs MMICare increased greatly' The production cost of GaAsMMIC is reduced.