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Properties of Sb2S3 and Sb2Se3 thin films obtained by pulsed laser ablation |
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| Authors: | I. S. Virt I. O. Rudyj I. V. Kurilo I. Ye. Lopatynskyi L. F. Linnik V. V. Tetyorkin P. Potera G. Luka |
| Affiliation: | 1274. Drogobych State Pedagogical University, Drogobych, 82100, Ukraine 4274. Rzeszow University, Rzeszow, Poland 2274. National University “Lviv Polytechnic”, Lviv, 79013, Ukraine 3274. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, 03028, Ukraine 5274. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland |
| Abstract: | The properties of Sb2S3 and Sb2Se3 thin films of variable thickness deposited onto Al2O3, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180°C in a vacuum chamber with a residual pressure of 10?5 Torr. The thickness of the films amounted to 40–1500 nm. The structure of the bulk material of the targets and films is investigated by the methods of X-ray diffraction and transmission high-energy electron diffraction, respectively. The electrical properties of the films are investigated in the temperature range of 253–310 K. It is shown that the films have semiconductor properties. The structural features of the films determine their optical parameters. |
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