High‐performance thin‐film transistor using silicide‐mediated crystallization

Abstract— We studied the silicide‐mediated crystallization of a‐Si for low‐temperature polycrystalline‐silicon (LTPS) on glass. By controling the heating method and Ni density on the a‐Si, the grain size could be increased to 40 μm. Radial grain growth from a NiSi₂ crystalline nucleus gives rise to a large‐grain poly‐Si without amorphous phase inside. A field‐effect mobility of over 200 cm²/V‐sec was achieved by using LTPS.