退火温度对电子束蒸发的ZnS薄膜性能的影响

为了获得光电性能好的ZnS窗口层薄膜,采用电子束蒸发法在玻璃基片上沉积ZnS薄膜,研究退火温度(200~500℃)对ZnS薄膜的结构和光电性能的影响。结果表明:所制备的薄膜均为闪锌矿结构的β-ZnS多晶薄膜,导电类型为n型。随着退火温度的增高,薄膜结晶度和光电性能都变好。但是,当退火温度过高(500℃)时,薄膜的半导体特性反而变差。退火温度为400℃时,ZnS薄膜的性能最佳,此时薄膜的透过率较高;电阻率较低,为246.2?.cm。

Influence of annealing temperature On properties of ZnS thin films prepared by electron-beam evaporation

In order to obtain good photoelectric properties of ZnS window layer thin film,ZnS thin films were deposited on glass substrates by electron-beam evaporation method,and the effect of annealing temperature(200~500 ℃) on the structure and photoelectric properties of obtained thin films was investigated.The results show that the prepared thin films are polycrystalline β-ZnS with sphalerite structure,and they are of n-type conduction.With the increase of the annealing temperature,the crystallinity and photoelectric properties of the thin films become better.But,when the annealing temperature is too high(500 ℃),the semiconducting properties of the thin films become worse.At annealing temperature of 400 ℃,ZnS thin films have the optimum properties with higher transmittance and lower resistivity of 246.2 ?.cm.