| 场致发射阵列制作工艺的研究 |
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| 引用本文： | 周洪军,尉伟,洪义麟,徐向东,陶晓明,霍同林,绍军,裴元吉,Chu Jiaru.场致发射阵列制作工艺的研究[J].微细加工技术,2001(3):14-17. |
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| 作者姓名： | 周洪军 尉伟 洪义麟 徐向东 陶晓明 霍同林 绍军 裴元吉 Chu Jiaru |
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| 作者单位： | 1. 中国科学技术大学
2. Surface and InterfaceDivision Department of Manufacturing Systems Mechanical Engineering Lab,Namiki 1-2, Tsukuba, |
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| 摘 要： | 研究了干法反应刻蚀和湿法强碱化学腐蚀方法对场致发射阵列顶部的锐化问题以及不同工作气体的干法反应刻蚀和湿法化学腐蚀对场致发射阵列Si尖顶部的SiO2绝缘层的去除方法，并对这两种方法进行了比较，给出了各自的优缺点。
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| 关 键 词： | 场致发射阵列 制作工艺 反应离子刻蚀 化学腐蚀 半导体工艺 |
| 文章编号： | 1003-8213(2001)03-0014-04 |
| 修稿时间： | 2000年9月4日 |
Study on Fabrication Processing of Field Emitter Array |
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| ZHOU Hong-jun,WEI Wei,HONG Yi-lin,XU Xiang-dong,TAO Xiao-ming,HUO Tong-lin,FU Shao-jun,PEI Yuan-ji,CHU Jia-ru.Study on Fabrication Processing of Field Emitter Array[J].Microfabrication Technology,2001(3):14-17. |
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| Authors: | ZHOU Hong-jun WEI Wei HONG Yi-lin XU Xiang-dong TAO Xiao-ming HUO Tong-lin FU Shao-jun PEI Yuan-ji CHU Jia-ru |
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| Affiliation: | ZHOU Hong-jun1,WEI Wei1,HONG Yi-lin1,XU Xiang-dong,TAO Xiao-ming1,HUO Tong-lin1,FU Shao-jun1,PEI Yuan-ji1,CHU Jia-ru2 |
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| Abstract: | The dry reative ion etching and wet strong alkali chemical etching to sharp the tips of field emitter array are studied. The methods to remove the SiO 2 insulator layer on the Si tips of field emitter array by RIE with different reactive gases or by wet chemical etching are discussed. The two methods are compared on their advantages and disadvatages. |
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| Keywords: | Field Emitter Array(FEA) Reactive Ion Etching(RIE) Wet Etching |
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