| InP异质结晶体管 |
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| 引用本文： | 苏里曼. InP异质结晶体管[J]. 微纳电子技术, 1992, 0(6) |
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| 作者姓名： | 苏里曼 |
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| 作者单位： | 北京电子管厂 北京 |
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| 摘 要： | 提出了准平面构成的InP HBT新结构。用Si离子注入在半绝缘In P:Fe上形成隐埋n型区来代替通常采用的外延n型收集区,可有效降低器件的高度,减小寄生参数,提高器件的可靠性。测量结果表明,晶体管的h_(fe)=100,V_(CE)=3～4V,f_T=10GHz。
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| 关 键 词： | 异质结双极晶体管 磷化铟 半导体工艺 |
InP Heterojunction Transistor |
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| Su Liman. InP Heterojunction Transistor[J]. Micronanoelectronic Technology, 1992, 0(6) |
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| Authors: | Su Liman |
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| Abstract: | A new InP HBT with quasi-plane structure is presented. The common epitaxial n-collectors were replaced by the buried n-region formed on semi-insulating InP: Fe with Si (?)on implantation. It can lower the height of deviCes,decrease parastic, parameter,and increase the reliability of devices. The measurements on the transistors: h_(fe)=100, V_(CE)=3～V,f_T=10GHz were obtained. |
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| Keywords: | HBT InP Semiconductor technology |
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