Effect of V2O5 additive to 0.4SrTiO3–0.6La(Mg0.5Ti0.5)O3 ceramics on sintering behavior and microwave dielectric properties |
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Affiliation: | 1. National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu, 610054, PR China;2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu, 610054, PR China;1. College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018, China;2. Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China |
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Abstract: | The effect of V2O5 addition on the microwave dielectric properties and the microstructures of 0.4SrTiO3–0.6La(Mg0.5Ti0.5)O3 ceramics sintered for 5 h at different sintering temperature were investigated systematically. It was found that the sintering temperature was effectively lowered about 200 °C by increasing V2O5 addition content. The grain sizes, bulk density as well as microwave dielectric properties were greatly dependent on sintering temperature and V2O5 content. The 4ST–6LMT ceramics with 0.25% V2O5 sintered at 1400 °C for 5 h in air exhibited optimum microwave dielectric properties of ɛr = 50.7, Q × f = 15049.6 GHz, Tf = −1.7 ppm/°C. |
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