Spray pyrolysed bismuth oxide thin films and their characterization |
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| Affiliation: | 1. Department of Physics, Malaviya National Institute of Technology, Jaipur, 302017, Rajasthan, India;2. CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, 333031, Rajasthan, India;3. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, U.P., India;4. Amity School of Applied Sciences, Amity University Rajasthan, Jaipur, 303007, Rajasthan, India;5. Amity Institute of Biotechnology, Amity University Rajasthan, Jaipur, 303007, Rajasthan, India;1. Department of Physics, University of the Free State, Bloemfontein ZA-9300, South Africa;2. Department of Chemistry, University of the Free State, Bloemfontein ZA-9300, South Africa;1. Department of Chemical Sciences, University of Johannesburg, Doornfontein 2028, South Africa;2. Centre for Nanostructures and Advanced Materials, DSI-CSIR Nanotechnology Innovation Centre, Council for Scientific and Industrial Research, Pretoria 0001, South Africa;1. School of Physics and Electronic Engineering, Taishan University, Taian, Shandong 271021, China;2. School of Chemistry and Environment, Beihang University, Beijing 100191, China |
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| Abstract: | Uniform, adherent and reproducible bismuth oxide thin films have been deposited on glass substrates from aqueous Bi(NO3)3 solution, using the solution spray technique. Their structural, surface morphological, optical, and electrical properties were investigated by XRD, AFM, optical absorption, electrical resistivity and thermo-emf measurements. The structural analysis from XRD pattern showed the formation of mixed phases of monoclinic Bi2O3 (predominant), tetragonal β-Bi2O3 and nonstiochiometric Bi2O2.33. The surface morphological studies on atomic force micrographs revealed round grain morphology of bismuth oxide crystallites. The optical studies showed a direct band gap of 2.90 eV for as-prepared bismuth oxide films. The electrical resistivity measurements of bismuth oxide films indicated a semiconducting behavior with the room temperature electrical resistivity of the order of 107 Ω cm. From thermo-emf measurements, the electrical conductivity was found to be of n-type. |
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