Microwave dielectric properties of Ba(Mg1/3Ta(2?2x)/3Wx/3Tix/3)O3 ceramics |
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| Affiliation: | 1. Ceramic Technology Division, Regional Research Laboratory, Trivandrum 695 019, India;2. Department of Electronics, Cochin University of Science and Technology, Cochin 682 022, India;1. Laboratory of Adsorption and Catalysis, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Wilrijk, Belgium;2. Flemish Institute for Technology Research (VITO nv), Boeretang 200, B-2400 Mol, Belgium;3. EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium;1. State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China;2. School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, China;3. Analytical and Testing Center, Southwest University of Science and Technology, Mianyang 621010, China;1. Department of Physics, Birla Institute of Technology, Mesra, 835215, Ranchi, Jharkhand, India;2. Technical Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai, 400085, India;3. Homi Bhabha National Institute, Anushakati Nagar, Mumbai, 400094, India |
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| Abstract: | The microwave dielectric properties of ceramics based on Ba(Mg1/3Ta(2?2x)/3Wx/3Tix/3)O3 is investigated as a function of x. The densification as well as dielectric properties deteriorate with increase in the substitution levels of (Ti1/3W1/3)3.33+ at (Ta2/3)3.33+ site in Ba(Mg1/3Ta2/3)O3. The τf is approaching zero between x = 0.1 and 0.15 in Ba(Mg1/3Ta(2?2x)/3Wx/3Tix/3)O3 where quality factor is reasonably good (Qu × f = 80,000–90,000 GHz). The Ba(Mg1/3Ta(2?2x)/3Wx/3Tix/3)O3 with x = 1.0 has ?r = 15.4, τf = ?25.1 ppm/°C, Qu × f = 35,400 GHz. |
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