Dielectric tensor measurement from a single Mueller matrix image

A technique for measuring dielectric tensors in anisotropic layered structures, such as thin films of biaxial materials, is demonstrated. The ellipsometric data are collected in a quasi-monochromatic Mueller matrix image acquired over a large range of incident and azimuthal angles by illuminating a very small area on the sample with a focused beam from a modulating polarization state generator. After the beam interacts with the sample, the reflected and/or transmitted light is collected using an imaging polarization state analyzer. An image of the exit pupil of a collection objective lens is formed across a CCD such that each pixel collects light from a different angle incident on the sample, thus acquiring ellipsometric data at numerous incident angles simultaneously. The large range of angles and orientations is necessary to accurately determine dielectric tensors. The small but significant polarization aberrations of the low-polarization objective lenses used to create and collect the focused beams provide a significant challenge to accurate measurement. Measurements are presented of a thin-film E-type polarizer and a stretched plastic biaxial film.