Electron effective mass in InuGa1−uPvAs1−v for 0 ≤ v ≤ 1 |
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| Authors: | Ernesto H. Perea Emilio Mendez Clifton G. Fonstad |
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| Affiliation: | (1) Department of Physics Center for Materials Science and Engineering, Massachusetts Institute of Technology, 02139 Cambridge, Massachusetts;(2) Department of Electrical Engineering and Computer Science Center for Materials Science and Engineering, Massachusetts Institute of Technology, 02139 Cambridge, Massachusetts |
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| Abstract: | The electron effective mass in InuGa1−uPvAs1−v has been measured on seven samples lattice-matched to InP and evenly spaced in values of v between 0 and 1, using the temperature dependence of the amplitude of the Shubnikov-de Haas oscillations at high magnetic fields. Values of the carrier concentrations, Hall mobilities and Dingle temperatures measured on these samples are also reported. Work sponsored in part by the National Science Foundation, Grant No. ENG 76-09586, and in part by International Telephone and Telegraph Electro-Optical Products Division. Work done in part at the M.I.T. Francis Bitter National Magnet Laboratory. Funded in part by the National Science Foundation under Grant No. DMR-76-80895. |
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| Keywords: | effective mass InGaAsP InP transport studies Shubnikov-de Haas |
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