|
|||||
|
|
| BP-212正性光刻胶的抗蚀特性研究 | |
| 引用本文： | 郑志霞,冯勇建,张丹,林雁飞. BP-212正性光刻胶的抗蚀特性研究[J]. 微纳电子技术, 2005, 42(2): 87-89,94 |
| 作者姓名： | 郑志霞 冯勇建 张丹 林雁飞 |
| 作者单位： | 1. 厦门大学机电工程系,福建,厦门,361005;莆田学院机电工程系,福建,莆田,351100 2. 厦门大学萨本栋微机电研究中心,福建,厦门,361005 3. 厦门大学机电工程系,福建,厦门,361005 |
| 摘 要： | BP-212正性光刻胶作为掩膜在BHF腐蚀液中腐蚀十几分钟后,光刻胶被腐蚀液破坏而浮胶。玻璃或热生长的二氧化硅深槽腐蚀时间要求几十分钟,传统解决办法是多次光刻腐蚀。本文研究了光刻胶抗腐蚀特性,得出足够的活化时间、合适的匀胶转速、多次坚膜腐蚀可以延长产生浮胶时间的结论。 |
| 关 键 词： | 正性光刻胶 掩膜 坚膜 湿法腐蚀 |
| 文章编号： | 1671-4776(2005)02-0087-03 |
Studies of the Corrosion Resistance of BP-212 Positive Resist |
|
| ZHENG Zhi-xiaa,,FENG Yong-jianb,ZHANG Dana,LIN Yan-feia. Studies of the Corrosion Resistance of BP-212 Positive Resist[J]. Micronanoelectronic Technology, 2005, 42(2): 87-89,94 | |
| Authors: | ZHENG Zhi-xiaa FENG Yong-jianb ZHANG Dana LIN Yan-feia |
| Affiliation: | ZHENG Zhi-xia1a,2,FENG Yong-jian1b,ZHANG Dan1a,LIN Yan-fei1a |
| Abstract: | BP-212 positive resist used for mask would be destroyed after Si or SiO2 was eroded in BHF more than 10 min. Glass or SiO2 must be etched several-ten minutes to gain deep grooves. The traditional solution was repetitious lithography and etching. The corrosion resistance of BP-212 positive resist was studied in this paper. The time that BP-212 was destroyed would be prolonged under the conditions of enough activated time,appropriate spin speed and several times hardbake. |
| Keywords: | positive resist masking hardbake wet etch |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |