多阻态铁电HLO忆阻器及其在联想学习电路和人脸识别中的实现(英文) |
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作者姓名: | 牛江珍 方子良 刘公杰 赵桢 闫小兵 |
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作者单位: | 1. Key Laboratory of Brain-like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University;2. Institute of Life Sciences and Green Development, Hebei University |
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基金项目: | financially supported by the National Key R&D Plan “Nano Frontier” Key Special Project (2021YFA1200502);;the National Natural Science Foundation of China (61674050 and 61874158);;the Natural Science Foundation of Hebei Province (F2022201054 and F2021201022);;Baoding Science and Technology Plan Project (2172P011);;the Science and Technology Project of Hebei Education Department (QN2020178 and QN2021026); |
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摘 要: | 随着摩尔定律接近物理极限,传统的冯诺依曼架构面临挑战.忆阻器在多层存储、神经形态系统和模拟电路中的应用具有克服冯诺依曼架构瓶颈的潜力.在这里,我们在硅衬底上生长了Pd/La:HfO2(HLO)/La2/3Sr1/3MnO3高性能忆阻器,其有利于与互补式氧化物半导体工艺兼容.该忆阻器器件表现出良好的循环稳定性和多级电阻状态存储能力以及器件的突触特性,如长时增强/抑制、短时记忆到长时记忆、尖峰时间依赖性可塑性和双脉冲促进.基于器件的类脑突触行为,在神经启发计算中识别人脸图像时,识别率高达91.11%.通过理论计算和硬件联想学习电路测试,基于铪基铁电忆阻器的生物联想学习行为得以实现.
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