| 具有大电导动态范围和多级电导态的铁电Hf0.5Zr0.5O2栅控突触晶体管(英文) |
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| 作者姓名： | 罗春来 张岩 帅文韬 贺可心 李明 陶瑞强 陈德扬 樊贞 张斌 周小元 戴吉岩 周国富 陆旭兵 刘俊明 |
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| 作者单位： | 1. Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University;2. College of Physics and Analytical and Testing Center, Chongqing University;3. Department of Applied Physics, The Hong Kong Polytechnic University;4. Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University;5. Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University |
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| 基金项目： | supported by the National Natural Science Foundation of China (62174059, 52250281 and 91963102)；;the Hong Kong Research Grant Council (15300619)；;the Science and Technology Projects in Guangzhou (202201000008)；;Guangdong Science and Technology Project-International Cooperation (2021A0505030064)；;the Joint Funds of Basic and Applied Basic Research Foundation of Guangdong Province (2019A1515110605)； |
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| 摘 要： | 得益于铁电材料的非易失性和快速擦写,铁电突触晶体管(FST)在神经形态计算应用中很有前景.然而,在低能耗下同时实现大电导动态范围(Gmax/Gmin)和多级有效电导态仍是一个挑战.在此,本文首次提出了由铁电Hf0.5Zr0.5O2(HZO)栅介质结合溶液处理的氧化铟(In2O3)突触晶体管以解决上述问题.通过精细调控的铁电相以及对铁电体和铁电/半导体界面的电荷注入良好抑制,实现了优异的突触特性.在每个尖峰事件490 fJ的低能耗下,该FST成功模拟了高达101个有效电导状态的长时程增强/抑制(LTP/D),且具有大电导动态范围(Gmax/Gmin=32.2)和优异耐久性(>1000个循环).此外,模拟实现了96.5%的手写数字识别准确率,这是现有报道的FST的最高记录.这项工作为开发低成本、高性能和节能的铁电突触晶体管提供了一条新途径.
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