二维钙钛矿可控外离子输运实现高重复性、低电压阻变(英文) |
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作者姓名: | 郑祎初 于东方 练辉俊 袁海洋 周喻 杨双 |
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作者单位: | 1. School of Mechatronic Engineering and Automation, Shanghai University;2. Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology;3. School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University;4. Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University |
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基金项目: | supported by the National Natural Science Fund for Excellent Young Scholars (52022030);;Shanghai Sailing Program (22YF1413100); |
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摘 要: | 有机-无机卤化物钙钛矿作为阻变介质材料在阻变存储器领域引起了极大的兴趣.其离子空间分布和离子输运决定了导电细丝的形成,但目前对这二者的了解有限,且存在随机性与动力学之间的本征矛盾.本文中,我们通过原位及非原位研究,系统地证明了二维钙钛矿薄膜晶界内存在具有空间限域效应的快速外部离子输运通道.通过调控介电层中阳离子输运通道,即晶界的几何形貌特征及结构,可以有效控制导电细丝的生长行为.最终,制备出具有0.09 V(1.8 kV cm-1)的超低阈值电压和低离散性(<10%)的免电激励阻变存储器件.该器件可柔性制备并具有多功能应用集成,如多值写入和光擦除功能.该工作可为阻变存储器中导电细丝形成动力学的调控开辟新的思路,并为存储器未来在电子和光子电路中的应用提供可靠的单元原件.
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