Monolithic integration in InGaAs-InGaAsP multiquantum-wellstructure using laser processing |
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| Authors: | Qiu BC Bryce AC de la Rue RM Marsh JH |
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| Affiliation: | Dept. of Electron. & Electr. Eng., Glasgow Univ.; |
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| Abstract: | We report the use of a laser irradiation process, which combines irradiation by continuous wave and Q-switched pulsed Nd:YAG lasers, to promote quantum-well intermixing. Differential shifts up to 70 meV have been obtained in GaInAsP structures. Extended cavity-ridge lasers with 800-μm-long active sections and 1000-μm-long passive sections, were fabricated. The slope efficiency of the extended cavity lasers is very close to that of 800-μm-long all-active lasers, and the threshold current is 10 mA higher than for an 800-μm-long all-active device. The loss in the intermixed single-mode waveguide is 2.1 cm-1 |
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