Integrated amplifiers using fully ion-implanted InP JFETs with hightransconductance |
| |
| Authors: | Kim S.J. Guth G. Vella-Coleiro G.P. |
| |
| Affiliation: | AT&T Bell Labs., Murray Hill, NJ; |
| |
| Abstract: | Monolithically integrated amplifiers have been fabricated using JFETs with a gate length of 1.5 μm and a maximum transconductance of 110 mS/mm, the highest ever reported for ion-implanted InP JFETs. The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The conventional direct-coupled amplifier shows a maximum gain of 8 (18 dB) while the symmetrical amplifier design exhibits the same gain without DC offset regardless of the FET threshold voltage and the power supply voltage used |
| |
| Keywords: | |
|
|
