GaAs FET power amplifier module with high efficiency |
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| Authors: | Chiba K. Kanmuri N. |
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| Affiliation: | NTT Yokosuka Electrical Communication Laboratory, Yokosuka, Japan; |
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| Abstract: | A high-efficiency GaAs FET power amplifier having a total efficiency of 70% and an output power of 2 W is realised in the 900 MHz band. A drain efficiency of 80% was achieved at a low operation voltage of 6 V. These high efficiencies were obtained by using the even-order harmonic tuning of an output matching circuit. Important parameters for achieving this efficiency are also clarified. |
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