| 静电屏蔽晶体管GAT的结构研究 |
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| 引用本文： | 郑海东. 静电屏蔽晶体管GAT的结构研究[J]. 微电子学, 1995, 25(3): 23-26 |
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| 作者姓名： | 郑海东 |
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| 作者单位： | 浙江大学功率器件研究所 |
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| 摘 要： | 本文介绍了静电屏蔽晶体管（ＧＡＴ）的结构与器件性能，该器件具有高耐压，高速和低饱和压降等优良特性。本文对该器件的结构作了较为详细的分析研究。
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| 关 键 词： | 功率器件 静电屏蔽晶体管 双极晶体管 结构 |
A Study on the Structure of Gate Associated Transistors |
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| Zheng Haidong. A Study on the Structure of Gate Associated Transistors[J]. Microelectronics, 1995, 25(3): 23-26 |
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| Authors: | Zheng Haidong |
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| Abstract: | A static shielding transistor(gate associated transistor,GAT)is presented in the pa- per.The device has the advantages of high breakdown voltage,fast switching speed and low satura- tion voltage drop as well as the improved reliability. A detailed investigation into the structure of the device is made in the paper. |
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| Keywords: | Power device Static shielding transistor |
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