| 用MOCVD方法制备ZnS：Mn交流薄膜电致发光显示器 |
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| 引用本文： | 赵丽娟,钟国柱.用MOCVD方法制备ZnS：Mn交流薄膜电致发光显示器[J].光电子．激光,1996,7(5):263-267. |
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| 作者姓名： | 赵丽娟 钟国柱 |
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| 作者单位： | 中国科学院长春物理研究所，中国科学院激发态物理开放实验室 |
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| 基金项目： | 国家自然科学基金,国科学激发态物理开放实验室基金 |
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| 摘 要： | 用ＭＯＣＶＤ方法制备ＺｎＳ：Ｍｎ交流薄膜电致发光显示器赵丽娟，钟国柱，杨宝钧，郑陈玮，赵国璋（中国科学院长春物理研究所１３００２１）（中国科学院激发态物理开放实验室）Ｚｎ：ＭｎＡｌｔｅｒｎａｔｉｖｅＣｕｒｒｅｎｔＴｈｉｎＦｉｌｍＥｌｅｃｔｒｏｌｕｍｉ...
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| 关 键 词： | 平板显示 电致发光显示器 MOCVD法 |
Zn:Mn Alternative Current Thin Film Electroluminescent Device Prepared by MOCVD |
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| o Lijuan,Zhong Guozhu,Yang Baojun,Zheng Chenwei,Zhao Guozhang.Zn:Mn Alternative Current Thin Film Electroluminescent Device Prepared by MOCVD[J].Journal of Optoelectronics·laser,1996,7(5):263-267. |
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| Authors: | o Lijuan Zhong Guozhu Yang Baojun Zheng Chenwei Zhao Guozhang |
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| Abstract: | The structure of ZnS.Mn thin films, which are fabricated by MOCVD, is cubic phase that the main peak is (111). Mn distribution is uniform. The relation between Mn doped-concentration and experimental parameters is researched. The device of ZDS:Mn ACTFEL of double-insulating strcture is prepared. Its brightness is higher than 1000cd / m2and efficiency is near 1.48lm / w. |
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| Keywords: | MOCVD ZnS:Mn TF crystallinity Mn distribution ACTFEL |
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