HIP法制备CuCr触头的真空电击穿特性

采用热等静压(HIP)固相烧结法制备了近乎完全致密、低氧、氮含量的CuCr合金材料,研究了在不同烧结温度下制备CuCr合金的Cr相颗粒度、电击穿场强及击穿区域,给出了CuCr合金Cr相粒子半径与击穿场强的关系式。结果表明:随着HIP烧结温度的上升,CuCr触头材料的Cr相颗粒度也将逐渐增大,导致真空电击穿场强减小,与此同时真空电击穿烧蚀面积增大,烧蚀坑深度逐步加深。

Vacuum breakdown properties of CuCr contacts prepared by hot isostatic pressing

CuCr alloy materials with a nearly full density and low-oxygen nitrogen content were prepared by hot isostatic pressing( HIP). The Cr phase granularity,break down field strength and break down area were systemically investigated for the CuCr alloys under different sintering temperatures. The relationship between the Cr phase particle radius and the breakdown field strength of CuCr alloy was explored.The results indicate that on a certain range as the HIP sintering temperature increases,the particle size of the CuCr alloy materials gradually increases. Then the larger the particle radius of CuCr alloy Cr phase,the smaller the vacuum electric breakdown field strength will be.Finally,when the particle radius of CuCr alloy Cr phase increases,the break down ablation area tends to expand,and the ablation pit also slightly deepens.