Physical/electromagnetic analysis of multifinger MOSFETs with SB‐SP combined methods

The frequency‐domain spectral balance technique has been demonstrated to be a viable alternative to the mixed‐domain Harmonic Balance technique. It has already been applied to the space‐domain polynomial expansion of the physical quantities inside the semiconductor, for the solution of steady‐state nonlinear differential equations, for the physical analysis of high‐frequency semiconductor devices. In this article it is coupled to a commercial electromagnetic solver, for the combined physical and electromagnetic analysis of multifinger MOSFET devices in linear and nonlinear regime. This method allows a fast and effective CAD analysis both in DC and RF periodic regime for very high frequencies. A quasi‐2D hydrodynamic formulation is used for a 0.35 μm gate length with a total 30 μm periphery, three finger MOSFET device; results are compared with those of a standard physical time‐domain, a harmonic balance and a spectral balance analysis for comparison of numerical efficiency. Moreover, comparison of S‐parameters with a commercial CAD tool with a compact model for circuit analysis is also given. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.