High isolation microstrip GaN‐HEMT Single‐FET Switch |
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Authors: | Walter Ciccognani Mauro Ferrari Ernesto Limiti |
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Affiliation: | Dipartimento di Ingegneria Elettronica, Università degli Studi di Roma Tor Vergata, Roma 00133, Italy |
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Abstract: | In this contribution an analytical approach to the design of high‐isolation microwave transmission line‐resonated switches is presented. Simulated and measured performance of a GaN HEMT single‐FET switch cell topology and the one of a complete SPDT using the proposed approach are presented to demonstrate the approach feasibility and effectiveness. The resulting SPDT, operating at X Band, is featured by 1 dB insertion loss, isolation better than 37 dB all over the operating bandwidth and a power handling capability higher than 39 dBm. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010. |
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Keywords: | power switch high isolation SPDT MMIC GaN HEMT |
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