Electrical characterization of the boron trifluoride doped poly(3‐aminoacetophenone)/p‐Si junction |
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| Authors: | Fahrettin Yakuphanoglu B. Filiz Şenkal |
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| Affiliation: | 1. Physics Department, Firat University, 23169, Elazig, Turkey;2. Faculty of Arts and Sciences, Department of Chemistry, ?stanbul Technical University, 34469, Maslak, ?stanbul, Turkey |
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| Abstract: | Electrical and interface state properties of the borontrifluoride doped poly(3‐aminoacetophenone)/p‐Si junction have been investigated by current‐voltage and impedance spectroscopy methods. Al/p‐Si/P3APBF3/Aldiode indicates a nonideal behavior with electrical parameters (n = 3.53, ?B = 0.82 eV, and Rs = 1.48 kΩ), which result from the interfacial layer, series resistance, and resistance of the organic semiconductor. The obtained barrier height value of the Al/p‐Si/P3APBF3/Aldiode is higher than that of the conventional Al/p‐Si (?B = 0.58 eV) Schottky diode. The interface state density of the diode was of the order of 1.05× 1012 eV?1 cm?2. It is evaluated that the barrier height and interface state density values of the diode are modified using the boron trifluoride doped poly (3‐aminoacetophenone) organic semiconductor. POLYM. ENG. SCI., 2010. © 2009 Society of Plastics Engineers |
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