Infrared characterization studies of poly-crystalline silicon annealed in a nitrogen atmosphere

A systematic study of the effect of annealing treatment in a nitrogen atmosphere on the oxygen and carbon impurities present in solar grade polysilicon has been conducted in the spectral region 4000–400 cm^–1 employing infrared spectroscopy. Thermal treatment was provided for 30 min at temperatures varying from 100–1300 °C. Results of the present study are in conformity with the reported annealing results on resistivity and photoconductivity.