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Photoluminescence study of the nitrogen content effect on GaAs/GaAs1 − xNx/GaAs/AlGaAs: (Si) quantum well |
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| Authors: | A Hamdouni F Bousbih S Ben bouzid S Aloulou JC Harmand R Chtourou |
| Affiliation: | aLaboratoire de Photovoltaïque et de Semiconducteur, Centre de Recherche et des Technologies de l'Energie, BP. 95, Hammam-Lif 2050, Tunisia bUnité des Matériaux Nanoélectroniques, Faculté des Sciences de Tunis, Tunisia cLaboratoire de Photonique et de Nanostructures, CNRS Route de Nozay 91 460, Marcoussis, France |
| Abstract: | We study the effect of nitrogen content in modulation-doped GaAs/GaAs1 ? xNx/GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs1 ? xNx/GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model. |
| Keywords: | GaAsN Photoluminescence spectroscopy Activation energy Doping III–V semiconductor |
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