Fabrication and electrical properties of Al/aniline green/n-Si/AuSb structure |
| |
Affiliation: | Atatürk University, Faculty of Sciences and Arts, Department of Physics, 25240 Erzurum, Turkey |
| |
Abstract: | The current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics of Al/aniline green(AG)/n-Si/AuSb structure were investigated at room temperature. A modified Norde's function combined with conventional forward I–V method was used to extract the parameters including barrier height (BH) and the series resistance. The barrier height and series resistance obtained from Norde's function was compared with those from Cheung functions, and it was seen that there was a good agreement between the BH values and series resistances from both methods. The C–V characteristics were performed at 10 and 500 kHz frequencies, and C–f characteristics were performed 0.0, +0.4 and −0.4 V. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|