Improvement of photon extraction efficiency of InGaN LEDs utilizing textured ZnO layer deposited by electrospray deposition |
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| Affiliation: | Department of Electronic Engineering, Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, ROC |
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| Abstract: | Improvement of photon extraction efficiency of InGaN LEDs has been achieved by deposition of textured ZnO layers on InGaN LED bare chips utilizing electrospray deposition. The electrical and spectral properties of the InGaN LED remain unchanged after the deposition of ZnO, while the InGaN LED with textured ZnO layer exhibits a wider far-field angular distribution. The optical power of the InGaN LED capped with ZnO layer is ∼30% higher than that without ZnO, which is due to increased photon escape probability as a result of the increased surface roughness. |
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