Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS) |
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Affiliation: | 1. Materials Science and Engineering Department, North Carolina State University, Raleigh, NC 27695, USA;2. Energy Research Center of the Netherlands, ECN, PO Box 1, NL-1755 ZG Petten, Netherlands |
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Abstract: | Carrier lifetime limitation defects in polycrystalline silicon ribbons have been examined in samples with high oxygen and carbon content. Infrared spectroscopy showed that essentially all supersaturated oxygen impurities precipitated within 1 h annealing at over 800 °C. Preferential defect etching revealed that a much higher density of oxygen precipitates were generated in dislocation-free grains than in those highly dislocated (105–107 cm−2) ones. Correlated with electron-beam-induced current imaging, we found that oxygen precipitates are the dominant carrier recombination defects in dislocation-free grains, while dislocations are the lifetime killer for highly dislocated grains. It is suggested that eliminating dislocations alone will not improve the carrier lifetime, considering that a higher density of oxygen precipitates formed in the absence of dislocation-related heterogeneous nucleation sites will significantly degrade the carrier lifetime. |
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