Growth and characterization of Ga2Te3 films by metalorganic molecular beam epitaxy |
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| Authors: | N Teraguchi F Kato M Konagai K Takahashi |
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| Affiliation: | (1) Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 2-12-1, Ohokayama, Meguro-ku, 152 Tokyo, Japan |
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| Abstract: | Single-crystal Ga2Te3 films were grown by metalorganic moleular beam epitaxy (MOMBE). The crystallinity of the Ga2Te3 films
was characterized by reflection high energy electron diffraction (RHEED) and x-ray diffraction measurements. Unique substrate
temperature and VI/III ratio dependence of crystallinity and growth rate are obtained in this experiment for the first time. |
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| Keywords: | III-VI compounds Ga sesquichalcogenide Ga2Te3 doping control ionicity MOMBE |
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